-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for T2N7002BK by Toshiba America Electronic Components
Overview of T2N7002BK by Toshiba America Electronic Components
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for T2N7002BK
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
T2N7002BK,LM
|
Avnet Americas | Trans MOSFET N-CH 60V 0.4A 3-Pin SOT-23 - Tape and Reel (Alt: T2N7002BK,LM) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 123000 |
|
RFQ | |
|
DISTI #
T2N7002BK,LM
|
Avnet Americas | Trans MOSFET N-CH 60V 0.4A 3-Pin SOT-23 - Tape and Reel (Alt: T2N7002BK,LM) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 123000 |
|
RFQ | |
|
DISTI #
T2N7002BK
|
TME | Transistor: N-MOSFET, unipolar, 60V, 0.4A, Idm: 1.2A, 320mW, SOT23 Min Qty: 20 | 4200 |
|
$0.0311 / $0.0535 | Buy Now |
|
DISTI #
T2N7002BK,LM
|
Avnet Americas | Trans MOSFET N-CH 60V 0.4A 3-Pin SOT-23 - Tape and Reel (Alt: T2N7002BK,LM) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 123000 |
|
RFQ | |
|
|
Chip1Cloud | 5650 |
|
RFQ |
Part Details for T2N7002BK
T2N7002BK CAD Models
T2N7002BK Part Data Attributes
|
|
T2N7002BK
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
T2N7002BK
Toshiba America Electronic Components
Small Signal MOS FET (Single)
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.4 A | |
| Drain-source On Resistance-Max | 1.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |