Part Details for STW24NM60N by STMicroelectronics
Overview of STW24NM60N by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STW24NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59T6719
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Newark | Mosfet, N Ch, 600V, 17A, To-247, Transistor Polarity:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:17A, On Resistance Rds(On):0.168Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STW24NM60N Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.7800 | Buy Now |
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DISTI #
497-STW24NM60N-ND
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DigiKey | MOSFET N-CH 600V 17A TO247 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
1144 In Stock |
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$3.1825 / $6.1600 | Buy Now |
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Bristol Electronics | 330 |
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RFQ | ||
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Quest Components | 264 |
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$4.2966 / $7.8120 | Buy Now | |
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Rochester Electronics | STW24NM - MOSFET 600V 0.19 OHM RoHS: Compliant Status: Obsolete Min Qty: 1 | 14 |
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$1.2000 / $1.4100 | Buy Now |
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DISTI #
STW24NM60N
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TME | Transistor: N-MOSFET, unipolar, 600V, 11A, 125W, TO247 Min Qty: 1 | 0 |
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$1.2000 / $1.6200 | RFQ |
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ComSIT USA | 600 V, 17 A, 0.168 OHM, TO-247 N-CHANNEL MDMESH II POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | Europe - 480 |
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RFQ |
Part Details for STW24NM60N
STW24NM60N CAD Models
STW24NM60N Part Data Attributes:
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STW24NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW24NM60N
STMicroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW24NM60N
This table gives cross-reference parts and alternative options found for STW24NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW24NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHP18N60E-GE3 | Power Field-Effect Transistor, 18A I(D), 600V, 0.202ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STW24NM60N vs SIHP18N60E-GE3 |
| SIHB18N60E-GE3 | Power Field-Effect Transistor, 18A I(D), 600V, 0.202ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 | Vishay Intertechnologies | STW24NM60N vs SIHB18N60E-GE3 |
| STB21NM60ND | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package | STMicroelectronics | STW24NM60N vs STB21NM60ND |
| STI21NM60ND | 17A, 600V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STW24NM60N vs STI21NM60ND |
| SP000881160 | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STW24NM60N vs SP000881160 |