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N-channel 100 V, 0.030 Ohm, 25 A, DPAK STripFET(TM) II Power MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72K6051
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Newark | Mosfet, N, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Power Dissipation:100W Rohs Compliant: Yes |Stmicroelectronics STD25NF10LA Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5442 |
|
$0.9740 / $1.8900 | Buy Now |
DISTI #
55R6915
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Newark | Lv Mosfet Planar & Old |Stmicroelectronics STD25NF10LA Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
86AK6474
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Newark | Mosfet, N-Ch, 100V, 25A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD25NF10LA Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.8820 / $0.9210 | Buy Now |
DISTI #
497-12552-1-ND
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DigiKey | MOSFET N-CH 100V 25A DPAK Min Qty: 1 Lead time: 39 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5751 In Stock |
|
$0.6705 / $1.6000 | Buy Now |
DISTI #
STD25NF10LA
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Avnet Americas | Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD25NF10LA) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 39 Weeks, 0 Days Container: Reel | 0 |
|
$0.7483 / $0.7805 | Buy Now |
DISTI #
511-STD25NF10LA
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Mouser Electronics | MOSFET 100 V Mosfet 35 RDS 25A D2PAK RoHS: Compliant | 0 |
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$0.6700 / $1.6000 | Order Now |
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STMicroelectronics | N-channel 100 V, 0.030 Ohm, 25 A, DPAK STripFET(TM) II Power MOSFET RoHS: Compliant Min Qty: 1 | 0 |
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$0.8700 / $1.5700 | Buy Now |
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Future Electronics | Single N-Channel 100 V 100 W 52 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.6750 / $0.7000 | Buy Now |
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Future Electronics | Single N-Channel 100 V 100 W 52 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.6750 / $0.7000 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 100 W 52 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.6750 / $0.7000 | Buy Now |
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STD25NF10LA
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD25NF10LA
STMicroelectronics
N-channel 100 V, 0.030 Ohm, 25 A, DPAK STripFET(TM) II Power MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252 | |
Package Description | TO-252, DPAK-3/2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE ENERGY RATED | |
Avalanche Energy Rating (Eas) | 450 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 25 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 110 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 78 ns | |
Turn-on Time-Max (ton) | 60 ns |