Datasheets
STD11NM60ND by: STMicroelectronics

N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package

Part Details for STD11NM60ND by STMicroelectronics

Results Overview of STD11NM60ND by STMicroelectronics

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STD11NM60ND Information

STD11NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD11NM60ND

Part # Distributor Description Stock Price Buy
DISTI # 497-8477-1-ND
DigiKey MOSFET N-CH 600V 10A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1061
In Stock
  • 1 $4.6700
  • 10 $3.0870
  • 100 $2.1907
  • 500 $1.8080
  • 1,000 $1.6852
  • 2,500 $1.6684
$1.6684 / $4.6700 Buy Now
DISTI # STD11NM60ND
Avnet Americas Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.6684
  • 5,000 $1.6430
  • 10,000 $1.6081
  • 15,000 $1.5889
  • 20,000 $1.5702
$1.5702 / $1.6684 Buy Now
DISTI # 511-STD11NM60ND
Mouser Electronics MOSFETs N-channel 600V, 10A FDMesh II RoHS: Compliant 0
Order Now
STMicroelectronics N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 0
  • 1 $4.2500
  • 10 $3.0100
  • 25 $2.9900
  • 100 $2.1600
  • 250 $2.1600
  • 500 $1.7700
$1.7700 / $4.2500 Buy Now
Future Electronics N-Channel 600 V 0.45 Ohm Surface Mount FDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,500 $1.1800
$1.1800 Buy Now
Future Electronics N-Channel 600 V 0.45 Ohm Surface Mount FDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel 0
Reel
  • 2,500 $1.1800
$1.1800 Buy Now
DISTI # STD11NM60ND
TME Transistor: N-MOSFET, unipolar, 600V, 6.3A, 90W, DPAK Min Qty: 1 0
  • 1 $1.9800
  • 5 $1.7900
  • 25 $1.5800
  • 100 $1.4300
  • 500 $1.3200
$1.3200 / $1.9800 RFQ
DISTI # STD11NM60ND
Avnet Silica Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 20000
Buy Now
DISTI # STD11NM60ND
EBV Elektronik Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STD11NM60ND

STD11NM60ND CAD Models

STD11NM60ND Part Data Attributes

STD11NM60ND STMicroelectronics
Buy Now Datasheet
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STD11NM60ND STMicroelectronics N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
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Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD11NM60ND

This table gives cross-reference parts and alternative options found for STD11NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD11NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STB11NM60T4 STMicroelectronics Check for Price N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package STD11NM60ND vs STB11NM60T4

STD11NM60ND Related Parts

STD11NM60ND Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STD11NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 60V. Additionally, a gate resistor (Rg) should be used to limit the gate current.

  • The maximum power dissipation of the STD11NM60ND is 110W, but this can be increased with proper heat sinking and thermal management.

  • Yes, the STD11NM60ND is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the maximum junction temperature (Tj) should not exceed 175°C.

  • To protect the STD11NM60ND from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the device is stored in an anti-static bag or container.