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Part Details for SQM120N06-3M5L_GE3 by Vishay Intertechnologies
Overview of SQM120N06-3M5L_GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SQM120N06-3M5L_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
75AH9228
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Newark | Mosfet, N-Ch, 60V, 120A, 175Deg C, 375W Rohs Compliant: Yes |Vishay SQM120N06-3M5L_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 785 |
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$3.0800 / $4.6000 | Buy Now |
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DISTI #
SQM120N06-3M5L_GE3
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: SQM120N06-3M5L_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$2.0692 / $2.6286 | Buy Now |
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DISTI #
78-SQM120N06-3M5LGE
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Mouser Electronics | MOSFET 60 V 120A 375 W AEC-Q101 Qualified RoHS: Compliant | 2209 |
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$1.9900 / $4.1000 | Buy Now |
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Future Electronics | Single N-Channel 60 V 3.5 mOhm 375 W SMT Automotive Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$1.9600 / $2.0200 | Buy Now |
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Bristol Electronics | 3200 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 60V, 0.0035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 2560 |
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$1.8900 / $3.7800 | Buy Now |
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DISTI #
SQM120N06-3M5L_GE3
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: SQM120N06-3M5L_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$2.0692 / $2.6286 | Buy Now |
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DISTI #
SQM120N06-3M5L-GE3
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TME | Transistor: N-MOSFET, unipolar, 60V, 120A, 375W, D2PAK,TO263 Min Qty: 1 | 0 |
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$2.1000 / $3.9300 | RFQ |
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DISTI #
SQM120N06-3M5L_GE3
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EBV Elektronik | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SQM120N06-3M5L_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQM120N06-3M5L_GE3
SQM120N06-3M5L_GE3 CAD Models
SQM120N06-3M5L_GE3 Part Data Attributes:
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SQM120N06-3M5L_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQM120N06-3M5L_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |