Datasheets
SK55DGL126 by: SEMIKRON

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, CASE T 14, SEMITOP 3, 11 PIN

Part Details for SK55DGL126 by SEMIKRON

Overview of SK55DGL126 by SEMIKRON

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Price & Stock for SK55DGL126

Part # Distributor Description Stock Price Buy
DISTI # SK55DGL126
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 0
  • 1 $108.4900
  • 3 $97.8600
  • 10 $91.3500
$91.3500 / $108.4900 RFQ

Part Details for SK55DGL126

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SK55DGL126 Part Data Attributes:

SK55DGL126 SEMIKRON
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SK55DGL126 SEMIKRON Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, CASE T 14, SEMITOP 3, 11 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-PUFM-X11
Pin Count 11
Manufacturer Package Code CASE T 14
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Semikron
Case Connection ISOLATED
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
JESD-30 Code R-PUFM-X11
JESD-609 Code e2
Number of Elements 1
Number of Terminals 11
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 115 ns

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