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Part Details for SIS892ADN-T1-GE3 by Vishay Intertechnologies
Overview of SIS892ADN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIS892ADN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63W4139
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Newark | Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant: Yes |Vishay SIS892ADN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 18000 |
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$0.7640 / $1.1000 | Buy Now |
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DISTI #
99W9583
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Newark | Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:52W Rohs Compliant: Yes |Vishay SIS892ADN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4130 / $0.4870 | Buy Now |
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DISTI #
SIS892ADN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$0.4185 / $0.5316 | Buy Now |
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DISTI #
78-SIS892ADN-T1-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 51308 |
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$0.4650 / $1.0600 | Buy Now |
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Future Electronics | MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$0.3950 / $0.4150 | Buy Now |
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Future Electronics | MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3950 / $0.4150 | Buy Now |
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DISTI #
SIS892ADN-T1-GE3
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TTI | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 24000 In Stock |
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$0.3880 / $0.4280 | Buy Now |
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DISTI #
SIS892ADN-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$0.4185 / $0.5316 | Buy Now |
|
DISTI #
SIS892ADN-T1-GE3
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TME | Transistor: N-MOSFET, unipolar, 100V, 28A, 52W, PowerPAK® 1212-8 Min Qty: 1 | 3000 |
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$0.5380 / $0.9890 | Buy Now |
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DISTI #
TMOSP10986
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Rutronik | N-CH 100V 28A 33mOhm PPAK1212-8 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Stock DE - 3000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4280 | Buy Now |
Part Details for SIS892ADN-T1-GE3
SIS892ADN-T1-GE3 CAD Models
SIS892ADN-T1-GE3 Part Data Attributes:
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SIS892ADN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS892ADN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 38 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-C5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIS892ADN-T1-GE3
This table gives cross-reference parts and alternative options found for SIS892ADN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS892ADN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK9M34-100EX | BUK9M34-100E - N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | SIS892ADN-T1-GE3 vs BUK9M34-100EX |
| 934064654115 | 27A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, 1 MM HEIGHT, PLASTIC, QFN3333, 8 PIN | NXP Semiconductors | SIS892ADN-T1-GE3 vs 934064654115 |
| SIS892ADN-T1-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIS892ADN-T1-GE3 vs SIS892ADN-T1-GE3 |