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Transistors / Power Field-Effect Transistors / SIS434DN-T1-GE3
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SIS434DN-T1-GE3 by:

Power Field-Effect Transistor, 17.6A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, 1212-8, POWERPAK-8

Part Details for SIS434DN-T1-GE3 by Vishay Intertechnologies

Overview of SIS434DN-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for SIS434DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 60AC3814
Newark Mosfet, n Ch,40V,35A, powerpak, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0063Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Dissipation Rohs Compliant: Yes |Vishay SIS434DN-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 13580
  • 1 $1.0500
  • 10 $0.8840
  • 25 $0.8260
  • 50 $0.7660
  • 100 $0.7080
$0.7080 / $1.0500 Buy Now
DISTI # 35R0027
Newark N Channel Mosfet, 40V, 35A, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Vishay SIS434DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.4400
  • 4,000 $0.3950
  • 6,000 $0.3810
  • 10,000 $0.3730
$0.3730 / $0.4400 Buy Now
DISTI # SIS434DN-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS434DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4802
  • 6,000 $0.4648
  • 12,000 $0.4494
  • 18,000 $0.4312
  • 24,000 $0.4172
  • 30,000 $0.3976
  • 300,000 $0.3780
$0.3780 / $0.4802 Buy Now
DISTI # 781-SIS434DN-GE3
Mouser Electronics MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 90132
  • 1 $0.9300
  • 10 $0.7630
  • 100 $0.5940
  • 500 $0.5040
  • 1,000 $0.4110
  • 3,000 $0.3850
  • 6,000 $0.3670
  • 9,000 $0.3500
$0.3500 / $0.9300 Buy Now
DISTI # E02:0323_00531172
Arrow Electronics Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2333 Europe - 6000
  • 3,000 $0.4328
$0.4328 Buy Now
Future Electronics Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 66000
Reel
  • 3,000 $0.4400
  • 6,000 $0.4300
  • 9,000 $0.4200
$0.4200 / $0.4400 Buy Now
Future Electronics Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3600
  • 6,000 $0.3550
  • 9,000 $0.3500
  • 12,000 $0.3450
$0.3450 / $0.3600 Buy Now
DISTI # 77772038
Verical Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2326 Americas - 12000
  • 3,000 $0.5897
  • 6,000 $0.5389
$0.5389 / $0.5897 Buy Now
DISTI # 75713935
Verical Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2333 Americas - 6000
  • 3,000 $0.4333
$0.4333 Buy Now
DISTI # 79014348
Verical Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R Min Qty: 73 Package Multiple: 1 Date Code: 1912 Americas - 150
  • 73 $0.4338
  • 100 $0.3913
$0.3913 / $0.4338 Buy Now
Bristol Electronics   6000
RFQ
DISTI # SIS434DN-T1-GE3
TTI MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 399000
In Stock
  • 3,000 $0.3770
  • 6,000 $0.3600
  • 9,000 $0.3500
$0.3500 / $0.3770 Buy Now
DISTI # SIS434DN-T1-GE3
TME Transistor: N-MOSFET, unipolar, 40V, 17.6A, Idm: 60A, 33W Min Qty: 1 0
  • 1 $0.9210
  • 10 $0.7580
  • 25 $0.7040
  • 100 $0.6390
  • 250 $0.6180
  • 500 $0.5960
  • 1,000 $0.5740
  • 3,000 $0.5530
$0.5530 / $0.9210 RFQ
DISTI # SIS434DN-T1-GE3
Avnet Asia Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R (Alt: SIS434DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 0
  • 3,000 $0.8600
  • 6,000 $0.8481
  • 9,000 $0.8364
  • 15,000 $0.8251
  • 30,000 $0.8034
  • 75,000 $0.7828
  • 150,000 $0.7632
$0.7632 / $0.8600 Buy Now
Chip1Cloud MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R 18000
RFQ
DISTI # C1S806001167247
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 150
  • 5 $0.4550
  • 10 $0.3850
  • 50 $0.3470
  • 100 $0.3130
$0.3130 / $0.4550 Buy Now
DISTI # SIS434DN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R (Alt: SIS434DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited QFN8 6000
RFQ

Part Details for SIS434DN-T1-GE3

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SIS434DN-T1-GE3 Part Data Attributes:

Parametric Data
SIS434DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIS434DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 17.6A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 17.6 A
Drain-source On Resistance-Max 0.0076 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for SIS434DN-T1-GE3

This table gives cross-reference parts and alternative options found for SIS434DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS434DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7772DP-T1-GE3 Power Field-Effect Transistor, 12.9A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIS434DN-T1-GE3 vs SI7772DP-T1-GE3
SI5458DU-T1-GE3 Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8 Vishay Intertechnologies SIS434DN-T1-GE3 vs SI5458DU-T1-GE3
SI7856ADP-T1-E3 TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SIS434DN-T1-GE3 vs SI7856ADP-T1-E3
SI7170DP-T1-GE3 Power Field-Effect Transistor, 28.5A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIS434DN-T1-GE3 vs SI7170DP-T1-GE3
SI7170DP-T1-GE3 TRANSISTOR 28.5 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SIS434DN-T1-GE3 vs SI7170DP-T1-GE3
SIR466DP-T1-GE3 Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIS434DN-T1-GE3 vs SIR466DP-T1-GE3
SI7856ADP-T1-E3 Power Field-Effect Transistor, 15A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SIS434DN-T1-GE3 vs SI7856ADP-T1-E3

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