Part Details for SIRA60DP-T1-GE3 by Vishay Intertechnologies
Overview of SIRA60DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Environmental Monitoring
Industrial Automation
Aerospace and Defense
Agriculture Technology
Medical Imaging
Communication and Networking
Price & Stock for SIRA60DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
99Y9654
|
Newark | Mosfet, N-Ch, 30V, 100A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Vishay SIRA60DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1137 |
|
$0.2920 | Buy Now |
|
DISTI #
20AC3870
|
Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIRA60DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5700 / $0.5820 | Buy Now |
|
DISTI #
SIRA60DP-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 30V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIRA60DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.7762 | Buy Now |
|
DISTI #
99Y9654
|
Avnet Americas | Transistor MOSFET N-CH 30V 100A 8-Pin PowerPAK SO - Product that comes on tape, but is not reeled (Alt: 99Y9654) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Ammo Pack | 1137 Partner Stock |
|
$1.0600 / $1.5600 | Buy Now |
|
DISTI #
78-SIRA60DP-T1-GE3
|
Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 13263 |
|
$0.5360 / $1.2200 | Buy Now |
|
|
Future Electronics | N-Channel 30 V 0.94 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
|
$0.5400 / $0.5600 | Buy Now |
|
|
Future Electronics | N-Channel 30 V 0.94 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5400 / $0.5600 | Buy Now |
|
|
Future Electronics | N-Channel 30 V 0.94 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$0.5400 / $0.7250 | Buy Now |
|
DISTI #
SIRA60DP-T1-GE3
|
TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.5310 / $0.5710 | Buy Now |
|
DISTI #
SIRA60DP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 100A, Idm: 400A Min Qty: 1 | 0 |
|
$0.8900 / $1.3200 | RFQ |
Part Details for SIRA60DP-T1-GE3
SIRA60DP-T1-GE3 CAD Models
SIRA60DP-T1-GE3 Part Data Attributes:
|
|
SIRA60DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIRA60DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Date Of Intro | 2016-09-25 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.00094 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 191 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 70 ns |