Part Details for SIHB33N60ET1-GE3 by Vishay Intertechnologies
Overview of SIHB33N60ET1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHB33N60ET1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67X6807
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Newark | |Vishay SIHB33N60ET1-GE3 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.8500 | Buy Now |
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DISTI #
SIHB33N60ET1-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 33A 3-Pin D2PAK T/R - Bulk (Alt: SIHB33N60ET1-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
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$2.9970 / $3.8073 | Buy Now |
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DISTI #
78-SIHB33N60ET1-GE3
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Mouser Electronics | MOSFET N-Channel 600V RoHS: Compliant | 839 |
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$2.8900 / $5.9400 | Buy Now |
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Future Electronics | MOSFET N-CH 600V 33A TO263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 | 0 |
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$2.9600 | Buy Now |
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DISTI #
SIHB33N60ET1-GE3
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TTI | MOSFET N-Channel 600V RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel |
Americas - 4800 In Stock |
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$3.4600 | Buy Now |
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Chip 1 Exchange | INSTOCK | 29120 |
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RFQ |
Part Details for SIHB33N60ET1-GE3
SIHB33N60ET1-GE3 CAD Models
SIHB33N60ET1-GE3 Part Data Attributes:
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SIHB33N60ET1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB33N60ET1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 793 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHB33N60ET1-GE3
This table gives cross-reference parts and alternative options found for SIHB33N60ET1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB33N60ET1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB60R099CP | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPB60R099CP |
| STB34N65M5 | N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package | STMicroelectronics | SIHB33N60ET1-GE3 vs STB34N65M5 |
| TK31V60X,LQ | 30.8A, 600V, 0.098ohm, N-CHANNEL, Si, POWER, MOSFET | Toshiba America Electronic Components | SIHB33N60ET1-GE3 vs TK31V60X,LQ |
| IPI60R099CPXKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPI60R099CPXKSA1 |
| IPB60R125CPATMA1 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPB60R125CPATMA1 |
| IPB60R099CPAATMA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPB60R099CPAATMA1 |
| TK28N65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHB33N60ET1-GE3 vs TK28N65W5 |
| SIHG33N60E-E3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | SIHB33N60ET1-GE3 vs SIHG33N60E-E3 |
| IPP60R099CPAAKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPP60R099CPAAKSA1 |
| IPB65R110CFD | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | SIHB33N60ET1-GE3 vs IPB65R110CFD |