Part Details for SI7540DP-T1-E3 by Vishay Intertechnologies
Overview of SI7540DP-T1-E3 by Vishay Intertechnologies
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Applications
Consumer Electronics
Education and Research
Environmental Monitoring
Industrial Automation
Audio and Video Systems
Agriculture Technology
Medical Imaging
Entertainment and Gaming
Price & Stock for SI7540DP-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 24 |
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RFQ | |
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Chip1Cloud | MOSFET N/P-CH 12V 7.6A PPAK SO-8 / Trans MOSFET N/P-CH 12V 7.6A 8-Pin PowerPAK SO EP T/R | 10000 |
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RFQ | |
DISTI #
1470133
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element14 Asia-Pacific | MOSFET, DUAL, NP, 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.8386 / $1.5154 | Buy Now |
DISTI #
1470133RL
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element14 Asia-Pacific | MOSFET, DUAL, NP, 8-SOIC RoHS: Compliant Min Qty: 10 Container: Reel | 0 |
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$0.8386 / $1.3020 | Buy Now |
DISTI #
1470133
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Farnell | MOSFET, DUAL, NP, 8-SOIC RoHS: Compliant Min Qty: 1 Lead time: 5 Weeks, 1 Days Container: Cut Tape | 0 |
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$1.0053 / $1.9679 | Buy Now |
DISTI #
1470133RL
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Farnell | MOSFET, DUAL, NP, 8-SOIC RoHS: Compliant Min Qty: 1 Lead time: 5 Weeks, 1 Days Container: Reel | 0 |
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$1.0053 / $1.9679 | Buy Now |
|
Perfect Parts Corporation | 76890 |
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RFQ |
Part Details for SI7540DP-T1-E3
SI7540DP-T1-E3 CAD Models
SI7540DP-T1-E3 Part Data Attributes
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SI7540DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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SI7540DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.6A I(D), 12V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |