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Part Details for SI2319CDS-T1-GE3 by Vishay Intertechnologies
Overview of SI2319CDS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2319CDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH2355
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Newark | P-Channel 40-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2319CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 6000 |
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$0.2270 | Buy Now |
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DISTI #
23T8498
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Newark | Mosfet Transistor, P Channel, -4.4 A, -40 V, 0.064 Ohm, -10 V, -1.2 V Rohs Compliant: Yes |Vishay SI2319CDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 422860 |
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$0.3830 / $0.6150 | Buy Now |
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DISTI #
86R3869
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Newark | Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:4.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W, Msl:- Rohs Compliant: Yes |Vishay SI2319CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1670 / $0.1800 | Buy Now |
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DISTI #
05W6934
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Newark | Mosfet, P Channel, -40V, -4.4A, Sot-23-3, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:4.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SI2319CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3010 | Buy Now |
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DISTI #
SI2319CDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 3.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 |
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$0.1613 / $0.1775 | Buy Now |
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DISTI #
781-SI2319CDS-T1-GE3
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Mouser Electronics | MOSFET -40V Vds 20V Vgs SOT-23 RoHS: Compliant | 118738 |
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$0.1570 / $0.5500 | Buy Now |
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Future Electronics | P-Channel 40 V 0.077 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 141000Reel |
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$0.1570 / $0.1680 | Buy Now |
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Future Electronics | P-Channel 40 V 0.077 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1570 / $0.1680 | Buy Now |
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Bristol Electronics | 36000 |
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RFQ | ||
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Quest Components | 4400 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 | 28800 |
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$0.1587 / $0.5290 | Buy Now |
Part Details for SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 CAD Models
SI2319CDS-T1-GE3 Part Data Attributes:
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SI2319CDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2319CDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.4A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |