Part Details for R5009FNJTL by ROHM Semiconductor
Overview of R5009FNJTL by ROHM Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R5009FNJTL
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
R5009FNJTLCT-ND
|
DigiKey | MOSFET N-CH 500V 9A LPTS Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
Buy Now | |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$1.0300 | Buy Now |
DISTI #
36542514
|
Verical | Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) LPTS T/R Min Qty: 45 Package Multiple: 1 Date Code: 1501 | Americas - 98 |
|
$1.6469 / $1.7121 | Buy Now |
|
Quest Components | 78 |
|
$1.9008 / $3.4560 | Buy Now | |
|
Ameya Holding Limited | MOSFET N-CH 500V 9A LPT Min Qty: 1 | 100-Authorized Distributor |
|
$1.1664 / $1.9828 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2015 Date Code: 2015 | 98 |
|
$0.8640 / $1.7410 | Buy Now |
Part Details for R5009FNJTL
R5009FNJTL CAD Models
R5009FNJTL Part Data Attributes:
|
R5009FNJTL
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
R5009FNJTL
ROHM Semiconductor
Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | LPTS, 3/2 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 5.4 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.84 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for R5009FNJTL
This table gives cross-reference parts and alternative options found for R5009FNJTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5009FNJTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTA8N50P | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | R5009FNJTL vs IXTA8N50P |
2SK2776(TO-220FL) | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | R5009FNJTL vs 2SK2776(TO-220FL) |
IXTP8N50P | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | R5009FNJTL vs IXTP8N50P |
PHW8N50E127 | TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | R5009FNJTL vs PHW8N50E127 |
PHP8ND50E127 | TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | R5009FNJTL vs PHP8ND50E127 |
STB8NA50-1 | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | STMicroelectronics | R5009FNJTL vs STB8NA50-1 |
2SK2776(TO-220SM) | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | R5009FNJTL vs 2SK2776(TO-220SM) |