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Power Field-Effect Transistor, 9A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5009ANX-ND
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DigiKey | MOSFET N-CH 500V 9A TO220 Min Qty: 1 Lead time: 23 Weeks Container: Bulk, Bulk |
484 In Stock |
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$0.9544 / $1.5000 | Buy Now |
DISTI #
755-R5009ANX
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Mouser Electronics | MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA RoHS: Compliant | 463 |
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$1.0100 / $2.3400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel | 0Reel |
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$1.0500 | Buy Now |
DISTI #
36525507
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Verical | Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 46 Package Multiple: 1 Date Code: 1401 | Americas - 95 |
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$1.5889 / $1.6518 | Buy Now |
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Quest Components | 76 |
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$1.9440 / $3.8880 | Buy Now | |
DISTI #
R5009ANX
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Avnet Silica | Trans MOSFET N-CH 500V �9A 3-Pin TO-220FM Bulk (Alt: R5009ANX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 1 Weeks, 6 Days | Silica - 0 |
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Buy Now |
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R5009ANX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5009ANX
ROHM Semiconductor
Power Field-Effect Transistor, 9A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 5.4 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.72 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R5009ANX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5009ANX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQP9N50C | Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220, 1000-TUBE | onsemi | R5009ANX vs FQP9N50C |
AP09N50P-HF | TRANSISTOR 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | R5009ANX vs AP09N50P-HF |
FQP9N50C_NL | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | R5009ANX vs FQP9N50C_NL |
KF9N50P | Power Field-Effect Transistor, 9A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | R5009ANX vs KF9N50P |
FQI9N50C | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 | Fairchild Semiconductor Corporation | R5009ANX vs FQI9N50C |
FQP9N50J69Z | Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | R5009ANX vs FQP9N50J69Z |