-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
PSMN2R0-25MLD - N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3tttTechnology@en-us
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
83Y6966
|
Newark | Mosfet, N-Ch, 25V, 70A, Sot-1210-8, Transistor Polarity:N Channel, Continuous Drain Current Id:70A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.00186Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.65V, Power Rohs Compliant: Yes |Nexperia PSMN2R0-25MLDX Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.5130 | Buy Now |
DISTI #
1727-2501-1-ND
|
DigiKey | MOSFET N-CH 25V 70A LFPAK33 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11584 In Stock |
|
$0.4208 / $0.7900 | Buy Now |
DISTI #
PSMN2R0-25MLDX
|
Avnet Americas | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK33 T/R - Tape and Reel (Alt: PSMN2R0-25MLDX) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.3075 / $0.3670 | Buy Now |
DISTI #
771-PSMN2R0-25MLDX
|
Mouser Electronics | MOSFET PSMN2R0-25MLD/SOT1210/mLFPAK RoHS: Compliant | 3012 |
|
$0.3990 / $0.9500 | Buy Now |
|
Future Electronics | PSMN2R0-25MLD Series, 25V 70A Surface Mount Mosfet LFPAK33 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Container: Reel | 0Reel |
|
$0.3100 / $0.3350 | Buy Now |
DISTI #
PSMN2R0-25MLDX
|
TTI | MOSFET PSMN2R0-25MLD/SOT1210/mLFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 1500 Container: Reel | Americas - 0 |
|
$0.3160 / $0.3490 | Buy Now |
DISTI #
PSMN2R0-25MLDX
|
TME | Transistor: N-MOSFET, NextPowerS3, unipolar, 25V, 70A, Idm: 555A Min Qty: 1 | 0 |
|
$0.6700 / $1.0100 | RFQ |
DISTI #
PSMN2R0-25MLDX
|
Avnet Asia | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK33 T/R (Alt: PSMN2R0-25MLDX) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days | 0 |
|
$0.2918 / $0.3263 | Buy Now |
DISTI #
PSMN2R0-25MLDX
|
Avnet Silica | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK33 T/R (Alt: PSMN2R0-25MLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
PSMN2R0-25MLDX
|
EBV Elektronik | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK33 T/R (Alt: PSMN2R0-25MLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | EBV - 1500 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
PSMN2R0-25MLDX
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PSMN2R0-25MLDX
Nexperia
PSMN2R0-25MLD - N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3tttTechnology@en-us
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | SOP-8, 4 PIN | |
Pin Count | 8 | |
Manufacturer Package Code | SOT1210 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 361 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.00306 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 555 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |