Part Details for PD85006-E by STMicroelectronics
Overview of PD85006-E by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Entertainment and Gaming
Price & Stock for PD85006-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
PD85006-E
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Avnet Americas | Transistor RF FET N-CH 40V 2A 870MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD85006-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Container: Bag | 0 |
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RFQ | |
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DISTI #
PD85006-E
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Avnet Americas | Transistor RF FET N-CH 40V 2A 870MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD85006-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Container: Bag | 0 |
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RFQ | |
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Chip1Cloud | FET RF 40V 870MHZ PWRSO-10RF / RF Mosfet LDMOS 13.6 V 200 mA 870MHz 17dB 6W 10-PowerSO | 14000 |
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RFQ | |
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DISTI #
PD85006-E
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EBV Elektronik | Transistor RF FET N-CH 40V 2A 870MHz 3-Pin PowerSO-10RF Tube (Alt: PD85006-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 1 Days | EBV - 0 |
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Part Details for PD85006-E
PD85006-E CAD Models
PD85006-E Part Data Attributes:
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PD85006-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD85006-E
STMicroelectronics
6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G2 | |
| Pin Count | 10 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 2 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |