-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
51M5659
|
Newark | Transistor, hemt, n-Chan,8V V(Br)Dss, pld Rohs Compliant: Yes |Nxp MRFG35003N6AT1 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$11.6400 / $12.2300 | Buy Now |
DISTI #
568-15040-1-ND
|
DigiKey | RF MOSFET PHEMT FET 6V PLD-1.5 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
853 In Stock |
|
$14.3213 / $20.7400 | Buy Now |
|
Rochester Electronics | MRFG35003 - GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 10700 |
|
$13.4700 / $15.8500 | Buy Now |
DISTI #
MRFG35003N6AT1
|
EBV Elektronik | Trans JFET 8V 3-Pin PLD-1.5 T/R (Alt: MRFG35003N6AT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 28 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
MRFG35003N6AT1
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
MRFG35003N6AT1
NXP Semiconductors
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 8 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-PQSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 85 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |