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Transistors / RF Power Field-Effect Transistors / MRFE6VP5600HR6
Datasheets
MRFE6VP5600HR6 by:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part Details for MRFE6VP5600HR6 by NXP Semiconductors

Overview of MRFE6VP5600HR6 by NXP Semiconductors

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics

Price & Stock for MRFE6VP5600HR6

Part # Distributor Description Stock Price Buy
DISTI # 85AC2005
Newark Rf Fet, 130V, 1.667Kw, 600Mhz, Ni-1230, Drain Source Voltage Vds:130V, Continuous Drain Current Id:-, Power Dissipation Pd:1.667Kw, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, Rf Transistor Case:Ni-1230, No. Of Rohs Compliant: Yes |Nxp MRFE6VP5600HR6 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $151.0200
$151.0200 Buy Now
DISTI # 32T0074
Newark Lateral N-Channel Broadband Rf Power Mosfet, 1.8-600 Mhz, 600 W Cw, 50 V/ Reel Rohs Compliant: Yes |Nxp MRFE6VP5600HR6 Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $146.8500
  • 500 $142.1500
  • 1,000 $139.8100
$139.8100 / $146.8500 Buy Now
DISTI # 568-15230-1-ND
DigiKey RF MOSFET LDMOS 50V NI1230 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 137
In Stock
  • 1 $168.4900
  • 10 $161.3710
  • 25 $157.8108
  • 150 $153.0647
$153.0647 / $168.4900 Buy Now
DISTI # MRFE6VP5600HR6
Avnet Americas Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP5600HR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 150 $167.9964
  • 300 $164.4720
  • 600 $159.7728
  • 900 $157.4232
  • 1,200 $153.8988
  • 1,500 $150.3744
  • 15,000 $145.6752
$145.6752 / $167.9964 Buy Now
DISTI # 841-MRFE6VP5600HR6
Mouser Electronics RF MOSFET Transistors VHV6 600W 50V NI1230H RoHS: Compliant 100
  • 1 $168.4900
  • 10 $161.3800
  • 25 $157.8200
  • 150 $146.1000
$146.1000 / $168.4900 Buy Now
DISTI # V72:2272_07204228
Arrow Electronics Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2333 Container: Cut Strips Americas - 93
  • 1 $165.4600
  • 10 $159.4600
  • 25 $157.6900
$157.6900 / $165.4600 Buy Now
Future Electronics Lateral N-Channel 50 V 600 MHz 600 W SMT Broadband RF Power MOSFET - NI-1230 RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 150 Container: Reel 0
Reel
  • 150 $143.2400
$143.2400 Buy Now
DISTI # MRFE6VP5600HR6
Avnet Americas Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP5600HR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 150 $167.9964
  • 300 $164.4720
  • 600 $159.7728
  • 900 $157.4232
  • 1,200 $153.8988
  • 1,500 $150.3744
  • 15,000 $145.6752
$145.6752 / $167.9964 Buy Now
DISTI # MRFE6VP5600HR6
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 136
  • 1 $178.8500
  • 10 $171.1900
  • 25 $166.4300
  • 50 $161.5000
$161.5000 / $178.8500 Buy Now
DISTI # MRFE6VP5600HR6
Avnet Silica Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R (Alt: MRFE6VP5600HR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MRFE6VP5600HR6
EBV Elektronik Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R (Alt: MRFE6VP5600HR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 12 Weeks, 0 Days EBV - 150
Buy Now

Part Details for MRFE6VP5600HR6

MRFE6VP5600HR6 Part Data Attributes:

Parametric Data
MRFE6VP5600HR6 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
MRFE6VP5600HR6 NXP Semiconductors 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 130 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1670 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRFE6VP5600HR6

This table gives cross-reference parts and alternative options found for MRFE6VP5600HR6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRFE6VP5600HR6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF6VP2600HR6 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors MRFE6VP5600HR6 vs MRF6VP2600HR6

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