Datasheets
MMBT3904 by:

Small Signal Bipolar Transistor,

Part Details for MMBT3904 by Galaxy Semi-Conductor Co Ltd

Overview of MMBT3904 by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Audio and Video Systems

Part Details for MMBT3904

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MMBT3904 Part Data Attributes

MMBT3904 Galaxy Semi-Conductor Co Ltd
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MMBT3904 Galaxy Semi-Conductor Co Ltd Small Signal Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.2 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 300 MHz
Turn-off Time-Max (toff) 250 ns
Turn-on Time-Max (ton) 70 ns

Alternate Parts for MMBT3904

This table gives cross-reference parts and alternative options found for MMBT3904. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT3904, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT3904W Small Signal Bipolar Transistor, Surge Components Inc MMBT3904 vs MMBT3904W
MMST3904 General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.2A; HFE Min: 100; HFE Max: 300; VCE (V): 1V; IC (mA): 10mA; VCE(SAT) (V): 0.3V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323 Galaxy Microelectronics MMBT3904 vs MMST3904
MMST3904F2 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT3904 vs MMST3904F2
MMBT3904 General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.1A; HFE Min: 100; HFE Max: 300; VCE (V): 1V; IC (mA): 10mA; VCE(SAT) (V): 0.3V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.25W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMBT3904 vs MMBT3904
MMBT3904F2 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT3904 vs MMBT3904F2
MMBT3904T General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.2A; HFE Min: 100; HFE Max: 300; VCE (V): 1V; IC (mA): 10mA; VCE(SAT) (V): 0.3V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.15W; Package: SOT-523; package_code: SOT-523; mfr_package_code: SOT-523 Galaxy Microelectronics MMBT3904 vs MMBT3904T
MMBT3904LT1 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, DB Lectro Inc MMBT3904 vs MMBT3904LT1
MMBT3904 Small Signal Bipolar Transistor Rochester Electronics LLC MMBT3904 vs MMBT3904
MMST3904 Small Signal Bipolar Transistor, Galaxy Semi-Conductor Co Ltd MMBT3904 vs MMST3904
LMBT3904WT3G Small Signal Bipolar Transistor, 0.2A I(C), NPN, LRC Leshan Radio Co Ltd MMBT3904 vs LMBT3904WT3G

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