Part Details for JANTXV2N3879 by VPT Components
Overview of JANTXV2N3879 by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for JANTXV2N3879
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANTXV2N3879
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Avnet Americas | JANTXV2N3879 - Bulk (Alt: JANTXV2N3879) Min Qty: 27 Package Multiple: 1 Container: Bulk | 0 |
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$45.8598 / $53.3778 | Buy Now |
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DISTI #
JANTXV2N3879
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TTI | Bipolar Transistors - BJT MIL-PRF-19500/526 Min Qty: 15 Package Multiple: 1 Container: Bulk | Americas - 0 |
|
$67.0600 | Buy Now |
Part Details for JANTXV2N3879
JANTXV2N3879 CAD Models
JANTXV2N3879 Part Data Attributes:
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JANTXV2N3879
VPT Components
Buy Now
Datasheet
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JANTXV2N3879
VPT Components
Power Bipolar Transistor,
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Package Description | TO-66, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 7 A | |
| Collector-Base Capacitance-Max | 175 pF | |
| Collector-Emitter Voltage-Max | 75 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 12 | |
| JEDEC-95 Code | TO-213AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 35 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 2500 ns | |
| Turn-on Time-Max (ton) | 250 ns | |
| VCEsat-Max | 1.2 V |