Datasheets
IXTX20N150 by:

Power Field-Effect Transistor,

Part Details for IXTX20N150 by Littelfuse Inc

Overview of IXTX20N150 by Littelfuse Inc

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Price & Stock for IXTX20N150

Part # Distributor Description Stock Price Buy
DISTI # 03AH1875
Newark Mosfet, N-Ch, 1.5Kv, 20A, Plus247, Channel Type:N Channel, Drain Source Voltage Vds:1.5Kv, Continuous Drain Current Id:20A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTX20N150 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 5
  • 1 $30.1700
  • 5 $28.8800
  • 10 $27.5900
  • 25 $26.3000
  • 100 $25.0100
  • 500 $23.4500
$23.4500 / $30.1700 Buy Now

Part Details for IXTX20N150

IXTX20N150 Part Data Attributes:

IXTX20N150 Littelfuse Inc
Buy Now Datasheet
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IXTX20N150 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 163 pF
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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