Datasheets
IXTN22N100L by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Part Details for IXTN22N100L by IXYS Corporation

Results Overview of IXTN22N100L by IXYS Corporation

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IXTN22N100L Information

IXTN22N100L by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTN22N100L

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTN22N100L
Mouser Electronics MOSFET Modules 22 Amps 1000V RoHS: Compliant 140
  • 1 $58.6000
  • 10 $51.2300
  • 20 $49.5200
  • 50 $47.8100
  • 100 $46.1000
$46.1000 / $58.6000 Buy Now
Future Electronics Single N-Channel 1000 V 600 mOhm 700 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $43.1000
  • 20 $42.7800
  • 30 $42.6000
  • 40 $42.4700
  • 50 $42.0600
$42.0600 / $43.1000 Buy Now
Future Electronics Single N-Channel 1000 V 600 mOhm 700 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 300 Container: Tube 0
Tube
  • 300 $44.0300
$44.0300 Buy Now
DISTI # IXTN22N100L
TTI MOSFET Modules 22 Amps 1000V Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $41.2500
$41.2500 Buy Now
DISTI # IXTN22N100L
TME Module, single transistor, 1kV, 22A, SOT227B, screw, Idm: 50A, 700W Min Qty: 1 0
  • 1 $71.0900
  • 3 $64.0200
  • 10 $56.5300
$56.5300 / $71.0900 RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 370
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IXTN22N100L

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IXTN22N100L Part Data Attributes

IXTN22N100L IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTN22N100L IXYS Corporation Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Nickel (Ni)
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTN22N100L

This table gives cross-reference parts and alternative options found for IXTN22N100L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTN22N100L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXTX22N100L Littelfuse Inc $37.4522 Power Field-Effect Transistor, IXTN22N100L vs IXTX22N100L
IXTN22N100L Littelfuse Inc $53.8750 Power Field-Effect Transistor, IXTN22N100L vs IXTN22N100L

IXTN22N100L Related Parts

IXTN22N100L Frequently Asked Questions (FAQ)

  • The maximum junction temperature that IXTN22N100L can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.

  • The recommended gate drive voltage for IXTN22N100L is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

  • Yes, IXTN22N100L is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.

  • To protect IXTN22N100L from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.