Part Details for IXTH52P10P by IXYS Corporation
Overview of IXTH52P10P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTH52P10P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTH52P10P
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Mouser Electronics | MOSFET -52.0 Amps -100V 0.050 Rds RoHS: Compliant | 324 |
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$4.3300 / $8.3300 | Buy Now |
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Future Electronics | Single P-Channel 100 V 300 W 60 nC Power Mosfet Flange Mount - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 40 Weeks Container: Tube | 0Tube |
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$4.5000 / $4.9400 | Buy Now |
DISTI #
IXTH52P10P
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TTI | MOSFET -52.0 Amps -100V 0.050 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$4.2900 / $4.7300 | Buy Now |
DISTI #
IXTH52P10P
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TME | Transistor: P-MOSFET, PolarP™, unipolar, -100V, -52A, 300W, TO247-3 Min Qty: 1 | 157 |
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$5.3800 / $7.5400 | Buy Now |
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New Advantage Corporation | MOSFET DIS.52A 100V P-CH TO-247AD POLARP RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 200 |
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$10.1100 / $10.8300 | Buy Now |
Part Details for IXTH52P10P
IXTH52P10P CAD Models
IXTH52P10P Part Data Attributes
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IXTH52P10P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH52P10P
IXYS Corporation
Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTH52P10P
This table gives cross-reference parts and alternative options found for IXTH52P10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH52P10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTH52P10P | Power Field-Effect Transistor, | Littelfuse Inc | IXTH52P10P vs IXTH52P10P |