Part Details for IRLML6402TRPBF by International Rectifier
Overview of IRLML6402TRPBF by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLML6402TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 264 |
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Bristol Electronics | 53 |
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Bristol Electronics | Min Qty: 9 | 224 |
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$0.1800 / $0.6000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236AB | 523 |
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$0.0928 / $0.1484 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236AB | 179 |
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$0.2400 / $0.8000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236AB | 75 |
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$0.2730 / $0.9100 | Buy Now |
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DISTI #
SMC-IRLML6402TRPBF
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2145 Container: Tape & Reel | 938 |
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Chip 1 Exchange | INSTOCK | 2080 |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 178 |
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$1.0000 / $1.5400 | Buy Now |
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Sense Electronic Company Limited | SOT-23 | 3739 |
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RFQ |
Part Details for IRLML6402TRPBF
IRLML6402TRPBF CAD Models
IRLML6402TRPBF Part Data Attributes:
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IRLML6402TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLML6402TRPBF
International Rectifier
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOT-23 | |
| Package Description | LEAD FREE, MICRO-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLML6402TRPBF
This table gives cross-reference parts and alternative options found for IRLML6402TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6402TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BL3435 | Power Field-Effect Transistor, | Galaxy Semi-Conductor Co Ltd | IRLML6402TRPBF vs BL3435 |
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402GPBF |
| BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | IRLML6402TRPBF vs BL3435 |
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402TRPBF vs IRLML6402GPBF |
| IRLML6402 | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402 |
| IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402GTRPBF |
| IRLML6402TR | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402TR |
| UT2311G-AE3-R | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | IRLML6402TRPBF vs UT2311G-AE3-R |