Datasheets
IRL7833PBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL7833PBF by Infineon Technologies AG

Overview of IRL7833PBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRL7833PBF

Part # Distributor Description Stock Price Buy
DISTI # 97K2391
Newark Mosfet Transistor, N Channel, 150 A, 30 V, 3.8 Mohm, 10 V, 2.3 V Rohs Compliant: Yes |Infineon IRL7833PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 453
  • 1 $2.0700
  • 10 $1.4100
  • 100 $1.2400
  • 500 $1.1200
  • 1,000 $1.0300
  • 3,000 $1.0300
  • 5,000 $0.9930
$0.9930 / $2.0700 Buy Now
DISTI # IRL7833PBF-ND
DigiKey MOSFET N-CH 30V 150A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 47
In Stock
  • 1 $1.8500
  • 10 $1.5370
$1.5370 / $1.8500 Buy Now
DISTI # IRL7833PBF
Avnet Americas Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL7833PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.8539
  • 1,200 $0.8280
  • 2,200 $0.8021
  • 5,000 $0.7762
  • 10,000 $0.7504
  • 50,000 $0.7245
  • 100,000 $0.6986
$0.6986 / $0.8539 Buy Now
DISTI # 942-IRL7833PBF
Mouser Electronics MOSFET MOSFT 30V 150A 32nV 3.8mOhm Qg log lvl RoHS: Compliant 1380
  • 1 $1.8500
  • 10 $1.4400
  • 100 $1.2700
  • 500 $1.1600
  • 1,000 $1.1500
$1.1500 / $1.8500 Buy Now
Future Electronics Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.2600
  • 200 $1.2200
  • 750 $1.1900
  • 2,000 $1.1700
  • 5,000 $1.1300
$1.1300 / $1.2600 Buy Now
Future Electronics Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.2600
  • 200 $1.2200
  • 750 $1.1900
  • 2,000 $1.1700
  • 5,000 $1.1300
$1.1300 / $1.2600 Buy Now
DISTI # 78955531
Verical Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 9 Package Multiple: 1 Date Code: 2346 Americas - 3339
  • 9 $1.4648
  • 10 $1.1585
  • 100 $1.0870
  • 500 $1.0185
  • 1,000 $0.9241
  • 3,000 $0.9219
  • 5,000 $0.9200
$0.9200 / $1.4648 Buy Now
DISTI # 75723209
Verical Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 28 Package Multiple: 1 Date Code: 2341 Americas - 999
  • 30 $1.0587
  • 50 $1.0475
  • 100 $1.0262
  • 200 $1.0238
  • 500 $1.0213
$1.0213 / $1.0587 Buy Now
Rochester Electronics IRL7833 - N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 299
  • 1 $0.9056
  • 25 $0.8875
  • 100 $0.8513
  • 500 $0.8150
  • 1,000 $0.7698
$0.7698 / $0.9056 Buy Now
DISTI # IRL7833PBF
TME Transistor: N-MOSFET, unipolar, 30V, 150A, 140W, TO220AB Min Qty: 1 104
  • 1 $1.4200
  • 3 $1.2700
  • 10 $1.1300
  • 50 $1.0100
  • 250 $0.9500
$0.9500 / $1.4200 Buy Now
Ameya Holding Limited   Min Qty: 2 4
  • 2 $2.1555
$2.1555 Buy Now
DISTI # C1S322000501906
Chip1Stop MOSFET RoHS: Compliant Container: Tube 999
  • 1 $1.4800
  • 10 $0.9240
  • 50 $0.8490
  • 100 $0.8300
  • 200 $0.8290
  • 500 $0.8170
$0.8170 / $1.4800 Buy Now
DISTI # SP001550382
EBV Elektronik Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB (Alt: SP001550382) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRL7833PBF

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IRL7833PBF Part Data Attributes

IRL7833PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL7833PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 560 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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