Part Details for IRFU2405PBF by Infineon Technologies AG
Overview of IRFU2405PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFU2405PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFU2405PBF
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Avnet Americas | Trans MOSFET N-CH 55V 56A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU2405PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 75 Container: Tube | 0 |
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RFQ | |
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Rochester Electronics | Planar 40<-<100V RoHS: Compliant Status: Obsolete Min Qty: 1 | 130 |
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$0.5561 / $0.6542 | Buy Now |
DISTI #
IRFU2405PBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 56A, 110W, IPAK Min Qty: 1 | 0 |
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$0.9000 / $1.3000 | RFQ |
Part Details for IRFU2405PBF
IRFU2405PBF CAD Models
IRFU2405PBF Part Data Attributes:
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IRFU2405PBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFU2405PBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |