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Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6841
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Newark | N Channel Mosfet, 55V, 110A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:110A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP064NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 189746 |
|
$1.0300 | Buy Now |
DISTI #
IRFP064NPBF-ND
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DigiKey | MOSFET N-CH 55V 110A TO247AC Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1149 In Stock |
|
$1.2777 / $2.7400 | Buy Now |
DISTI #
63J6841
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Avnet Americas | Transistor MOSFET N-CH 55V 98A 3-Pin TO-247AC Tube - Bulk (Alt: 63J6841) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 3 Days Container: Bulk | 94590 Partner Stock |
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$1.3900 / $2.1500 | Buy Now |
DISTI #
IRFP064NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC EL - Rail/Tube (Alt: IRFP064NPBF) RoHS: Not Compliant Min Qty: 800 Package Multiple: 25 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$1.1925 / $1.4481 | Buy Now |
DISTI #
942-IRFP064NPBF
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Mouser Electronics | MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC RoHS: Compliant | 3840 |
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$1.2700 / $2.1900 | Buy Now |
DISTI #
E02:0323_00175216
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Arrow Electronics | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2412 | Europe - 2583 |
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$1.0415 / $1.6294 | Buy Now |
DISTI #
V99:2348_13892409
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Arrow Electronics | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2236 | Americas - 1 |
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$1.0928 / $1.5307 | Buy Now |
DISTI #
70017032
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.008Ohm, ID 110A, TO-247AC, PD 200W, VGS +/-20V | Infineon IRFP064NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 3 |
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$1.5300 / $2.0300 | Buy Now |
|
Future Electronics | Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube | 12000Tube |
|
$1.2900 / $1.4400 | Buy Now |
|
Future Electronics | Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 25 Container: Tube | 0Tube |
|
$1.2900 / $1.4500 | Buy Now |
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IRFP064NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP064NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 480 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 390 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |