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Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
65R4956
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5015TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.8910 / $1.8800 | Buy Now |
DISTI #
65R4957
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5015TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7870 / $0.8010 | Buy Now |
DISTI #
IRFH5015TRPBFCT-ND
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DigiKey | MOSFET N-CH 150V 10A/56A 8PQFN Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
10492 In Stock |
|
$0.7578 / $1.8100 | Buy Now |
DISTI #
IRFH5015TRPBF
|
Avnet Americas | Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH5015TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.7073 / $0.8083 | Buy Now |
DISTI #
942-IRFH5015TRPBF
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Mouser Electronics | MOSFET 150V SINGLE N-CH 31mOhms 33nC RoHS: Compliant | 834 |
|
$0.7680 / $1.6100 | Buy Now |
DISTI #
V72:2272_13890383
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Arrow Electronics | Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2228 Container: Cut Strips | Americas - 2780 |
|
$0.6414 / $0.9228 | Buy Now |
DISTI #
70019245
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RS | MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN | Infineon IRFH5015TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
|
$1.2500 / $1.5600 | RFQ |
|
Future Electronics | Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
|
$0.5100 | Buy Now |
|
Future Electronics | Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
|
$0.7650 | Buy Now |
DISTI #
75723620
|
Verical | Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R Min Qty: 33 Package Multiple: 1 Date Code: 2329 | Americas - 4000 |
|
$0.7813 / $0.9638 | Buy Now |
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IRFH5015TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5015TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.031 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |