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Transistors / Power Field-Effect Transistors / IRFBE30PBF
Datasheets
IRFBE30PBF by:

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFBE30PBF by Vishay Intertechnologies

Overview of IRFBE30PBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFBE30PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J6695
Newark N Channel Mosfet, 800V, 4.1A To-220, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:4.1A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFBE30PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 359
  • 1 $2.3500
  • 10 $1.8600
  • 25 $1.7700
  • 50 $1.6800
  • 100 $1.5900
  • 500 $1.4700
$1.4700 / $2.3500 Buy Now
DISTI # 38K2467
Newark Power Mosfet, N Channel, 4.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFBE30PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 950
  • 1 $2.9400
  • 10 $2.6500
  • 25 $2.4800
  • 50 $2.3100
  • 100 $2.1400
  • 500 $1.7500
$1.7500 / $2.9400 Buy Now
DISTI # IRFBE30PBF
Avnet Americas Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRFBE30PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Bulk 6618
  • 1,000 $1.3000
$1.3000 Buy Now
DISTI # 63J6695
Avnet Americas Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J6695) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk 399 Partner Stock
  • 1 $2.3500
  • 10 $1.8100
  • 25 $1.7400
  • 50 $1.6600
  • 100 $1.5900
$1.5900 / $2.3500 Buy Now
DISTI # 844-IRFBE30PBF
Mouser Electronics MOSFET 800V N-CH HEXFET RoHS: Compliant 1557
  • 1 $1.9600
  • 10 $1.5600
  • 100 $1.3800
  • 500 $1.3000
$1.3000 / $1.9600 Buy Now
DISTI # V36:1790_09218688
Arrow Electronics Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2328 Americas - 1185
  • 1 $1.4568
  • 10 $1.2625
  • 100 $1.1241
  • 500 $0.8620
$0.8620 / $1.4568 Buy Now
DISTI # V99:2348_09218688
Arrow Electronics Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2337 Americas - 928
  • 1 $1.8246
  • 10 $1.4849
  • 100 $1.2670
  • 500 $0.9310
$0.9310 / $1.8246 Buy Now
DISTI # E02:0323_00021297
Arrow Electronics Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2408 Europe - 295
  • 1 $1.4867
  • 10 $1.2654
  • 100 $1.1131
  • 500 $0.8389
$0.8389 / $1.4867 Buy Now
DISTI # 70078888
RS MOSFET, Power, N-Ch, VDSS 800V, RDS(ON) 3 Ohms, ID 4.1A, TO-220AB, PD 125W, VGS +/-20V | Vishay PCS IRFBE30PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 769
  • 1 $2.0000
  • 5 $1.8400
  • 10 $1.7600
  • 100 $1.6000
  • 250 $1.5000
$1.5000 / $2.0000 Buy Now
Future Electronics Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Tube 6650
Tube
  • 1 $1.0300
  • 40 $0.9800
  • 150 $0.9400
  • 500 $0.9000
  • 2,000 $0.8250
$0.8250 / $1.0300 Buy Now
Future Electronics Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Tube 2000
Tube
  • 1 $1.0300
  • 40 $0.9800
  • 150 $0.9400
  • 500 $0.9000
  • 2,000 $0.8250
$0.8250 / $1.0300 Buy Now
DISTI # 80338086
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 1000 Package Multiple: 1000 Date Code: 2414 Americas - 4000
  • 1,000 $1.3419
  • 2,000 $1.2262
$1.2262 / $1.3419 Buy Now
DISTI # 80338076
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 50 Package Multiple: 50 Date Code: 2414 Americas - 1200
  • 50 $1.3419
  • 300 $1.2262
  • 600 $1.1409
  • 900 $1.0760
$1.0760 / $1.3419 Buy Now
DISTI # 69725648
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 7 Package Multiple: 1 Date Code: 2328 Americas - 1185
  • 7 $1.4568
  • 10 $1.2625
  • 100 $1.1241
  • 500 $0.8620
$0.8620 / $1.4568 Buy Now
DISTI # 71201473
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 7 Package Multiple: 1 Date Code: 2337 Americas - 928
  • 7 $1.8246
  • 10 $1.4849
  • 100 $1.2670
  • 500 $0.9310
$0.9310 / $1.8246 Buy Now
DISTI # 78402175
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 10 Package Multiple: 1 Americas - 290
  • 10 $1.2616
  • 100 $1.1097
  • 500 $0.8364
$0.8364 / $1.2616 Buy Now
DISTI # 67613631
Verical Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB Min Qty: 25 Package Multiple: 1 Date Code: 2240 Americas - 115
  • 25 $1.2425
  • 50 $1.1063
  • 100 $1.0638
$1.0638 / $1.2425 Buy Now
Bristol Electronics   744
RFQ
Quest Components 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 800
  • 1 $4.7490
  • 342 $2.6120
  • 767 $2.3745
$2.3745 / $4.7490 Buy Now
DISTI # IRFBE30PBF
TTI MOSFET 800V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 250
In Stock
  • 50 $1.0400
  • 100 $1.0200
  • 150 $1.0000
  • 250 $0.9800
  • 500 $0.9200
  • 1,000 $0.9100
  • 2,000 $0.8900
$0.8900 / $1.0400 Buy Now
DISTI # IRFBE30PBF
TME Transistor: N-MOSFET, unipolar, 800V, 2.6A, 125W, TO220AB Min Qty: 1 239
  • 1 $1.1700
  • 3 $1.0400
  • 10 $0.9300
  • 50 $0.8600
  • 250 $0.8000
$0.8000 / $1.1700 Buy Now
Chip 1 Exchange INSTOCK 245700
RFQ
DISTI # IRFBE30PBF
Avnet Asia Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB (Alt: IRFBE30PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days 0
  • 1,000 $1.4282
  • 2,000 $1.4083
  • 3,000 $1.3890
  • 5,000 $1.3703
  • 10,000 $1.3342
  • 25,000 $1.3000
  • 50,000 $1.2675
$1.2675 / $1.4282 Buy Now
DISTI # C1S803600827259
Chip1Stop Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB RoHS: Not Compliant pbFree: No Container: Tube 115
  • 1 $1.2300
  • 10 $1.0000
  • 50 $0.8910
  • 100 $0.8570
$0.8570 / $1.2300 Buy Now
CHIPMALL.COM LIMITED Package/EnclosureTO-220-3 fet typeN-Channel Operating temperature-55C~150CTJ Gate voltage Vgs20V Drain-source voltage Vds800V 1000
  • 3 $11.2022
  • 10 $3.2830
  • 50 $2.6961
  • 100 $2.5794
  • 500 $2.4919
  • 1,000 $2.4319
$2.4319 / $11.2022 Buy Now
DISTI # IRFBE30PBF
EBV Elektronik Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB (Alt: IRFBE30PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 5850
Buy Now
Sense Electronic Company Limited TO-220 24000
RFQ
Wuhan P&S 800V,4.1A,N-Channel MOSFET Min Qty: 1 100000
  • 1 $8.4400
  • 100 $3.3800
  • 500 $3.1300
  • 1,000 $3.0400
$3.0400 / $8.4400 Buy Now

Part Details for IRFBE30PBF

IRFBE30PBF CAD Models

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IRFBE30PBF Part Data Attributes

Parametric Data
IRFBE30PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFBE30PBF Vishay Intertechnologies Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 4 Days
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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