Datasheets
IRFBC40STRLPBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRFBC40STRLPBF by Vishay Siliconix

Overview of IRFBC40STRLPBF by Vishay Siliconix

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFBC40STRLPBFCT-ND
DigiKey MOSFET N-CH 600V 6.2A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 796
In Stock
  • 1 $4.2800
  • 10 $3.5930
  • 100 $2.9070
  • 800 $2.5840
  • 1,600 $2.2125
  • 2,400 $2.0833
$2.0833 / $4.2800 Buy Now

Part Details for IRFBC40STRLPBF

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IRFBC40STRLPBF Part Data Attributes:

IRFBC40STRLPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFBC40STRLPBF Vishay Siliconix Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40STRLPBF

This table gives cross-reference parts and alternative options found for IRFBC40STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFBC40STRL-GE3 TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRFBC40STRLPBF vs SIHFBC40STRL-GE3
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRLPBF vs IRFBC40SPBF
IRFBC40STRL Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRFBC40STRLPBF vs IRFBC40STRL
IRFBC40STRLPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRLPBF vs IRFBC40STRLPBF
IRFBC40STRR Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFBC40STRLPBF vs IRFBC40STRR
IRFBC40STRRPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRLPBF vs IRFBC40STRRPBF
SIHFBC40S-E3 TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRFBC40STRLPBF vs SIHFBC40S-E3
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRFBC40STRLPBF vs IRFBC40SPBF
Part Number Description Manufacturer Compare
FQB10N60C Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation IRFBC40STRLPBF vs FQB10N60C
FQB8N60CTM Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation IRFBC40STRLPBF vs FQB8N60CTM
2SK3299-ZJ Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN NEC Electronics Group IRFBC40STRLPBF vs 2SK3299-ZJ
2SK2908-01S Power Field-Effect Transistor, 9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 Fuji Electric Co Ltd IRFBC40STRLPBF vs 2SK2908-01S
FQB8N60C Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation IRFBC40STRLPBF vs FQB8N60C
2SK3116-ZJ Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN NEC Electronics Group IRFBC40STRLPBF vs 2SK3116-ZJ
FQB8N60CTM Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, D2PAK, 800-REEL onsemi IRFBC40STRLPBF vs FQB8N60CTM
FQB6N60 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRFBC40STRLPBF vs FQB6N60
STB3NB60-1 3.3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics IRFBC40STRLPBF vs STB3NB60-1
FQB8N60CFTM Power Field-Effect Transistor, 6.26A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation IRFBC40STRLPBF vs FQB8N60CFTM

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