Datasheets
IRFBC40STRL by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Part Details for IRFBC40STRL by Vishay Intertechnologies

Overview of IRFBC40STRL by Vishay Intertechnologies

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40STRL

Part # Distributor Description Stock Price Buy
DISTI # IRFBC40STRL
Avnet Americas TRANS MOSFET N-CH 600V 6.2A 3PIN D2PAK - Tape and Reel (Alt: IRFBC40STRL) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
DISTI # IRFBC40STRL
Avnet Americas TRANS MOSFET N-CH 600V 6.2A 3PIN D2PAK - Tape and Reel (Alt: IRFBC40STRL) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
Chip1Cloud Power MOSFET | MOSFET N-CH 600V 6.2A D2PAK 9600
RFQ

Part Details for IRFBC40STRL

IRFBC40STRL CAD Models

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IRFBC40STRL Part Data Attributes:

IRFBC40STRL Vishay Intertechnologies
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IRFBC40STRL Vishay Intertechnologies Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40STRL

This table gives cross-reference parts and alternative options found for IRFBC40STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRL vs IRFBC40SPBF
IRFBC40STRLPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRL vs IRFBC40STRLPBF
Part Number Description Manufacturer Compare
IRFBC40STRLPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRL vs IRFBC40STRLPBF
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFBC40STRL vs IRFBC40SPBF

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