Part Details for IRFBC40PBF by Vishay Siliconix
Overview of IRFBC40PBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRFBC40PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRFBC40PBF-ND
|
DigiKey | MOSFET N-CH 600V 6.2A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
2780 In Stock |
|
$0.9706 / $2.3100 | Buy Now |
|
DISTI #
70459437
|
RS | IRFBC40PBF N-channel MOSFET Transistor, 6.2 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC40PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.5800 / $1.8600 | RFQ |
|
|
New Advantage Corporation | Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 1250 |
|
$1.1100 / $1.1900 | Buy Now |
Part Details for IRFBC40PBF
IRFBC40PBF CAD Models
IRFBC40PBF Part Data Attributes:
|
|
IRFBC40PBF
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
IRFBC40PBF
Vishay Siliconix
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 570 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFBC40PBF
This table gives cross-reference parts and alternative options found for IRFBC40PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STP7NB60 | 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRFBC40PBF vs STP7NB60 |
| IRFBC40LCPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFBC40PBF vs IRFBC40LCPBF |
| MTP6N60E | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | IRFBC40PBF vs MTP6N60E |
| IRFBC42 | 5.4A, 600V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | IRFBC40PBF vs IRFBC42 |
| IRFBC42PBF | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFBC40PBF vs IRFBC42PBF |
| IRFBC40 | 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | IRFBC40PBF vs IRFBC40 |
| IRFBC40LC | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFBC40PBF vs IRFBC40LC |
| IRFBC40LCPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRFBC40PBF vs IRFBC40LCPBF |
| SSP7N60 | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFBC40PBF vs SSP7N60 |
| MTP6N60E | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFBC40PBF vs MTP6N60E |