Datasheets
IRFBC40LPBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Part Details for IRFBC40LPBF by Vishay Siliconix

Overview of IRFBC40LPBF by Vishay Siliconix

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40LPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFBC40LPBF-ND
DigiKey MOSFET N-CH 600V 6.2A TO262-3 Min Qty: 1000 Lead time: 10 Weeks Container: Tube Temporarily Out of Stock
  • 1,000 $2.2125
$2.2125 Buy Now

Part Details for IRFBC40LPBF

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IRFBC40LPBF Part Data Attributes:

IRFBC40LPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFBC40LPBF Vishay Siliconix Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40LPBF

This table gives cross-reference parts and alternative options found for IRFBC40LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40LPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Vishay Intertechnologies IRFBC40LPBF vs IRFBC40LPBF
Part Number Description Manufacturer Compare
FQI12N60 Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs FQI12N60
SSI10N60BTU Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs SSI10N60BTU
FQI12N60TU Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs FQI12N60TU
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRFBC40LPBF vs IRF830ALPBF
IRFSL11N50APBF Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRFBC40LPBF vs IRFSL11N50APBF
IRFSL9N60APBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Vishay Siliconix IRFBC40LPBF vs IRFSL9N60APBF
2SK2908-01L Power Field-Effect Transistor, 9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 Fuji Electric Co Ltd IRFBC40LPBF vs 2SK2908-01L
FQI2N60TU Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs FQI2N60TU
STB13NK60Z-1 13A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 STMicroelectronics IRFBC40LPBF vs STB13NK60Z-1
SPI07N60C3 Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3 Infineon Technologies AG IRFBC40LPBF vs SPI07N60C3

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