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Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6689
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Newark | N Ch Mosfet, 600V, 6.2A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:6.2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFBC40LCPBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRFBC40LCPBF
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Avnet Americas | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: IRFBC40LCPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$2.1317 / $2.7080 | Buy Now |
DISTI #
844-IRFBC40LCPBF
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Mouser Electronics | MOSFET 600V N-CH HEXFET RoHS: Compliant | 2127 |
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$1.9700 / $4.2300 | Buy Now |
DISTI #
70078885
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RS | MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 1.2 Ohms, ID 6.2A, TO-220AB, PD 125W, VGS+/-30V | Vishay PCS IRFBC40LCPBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$2.1400 / $2.5200 | RFQ |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.8700 / $2.0600 | Buy Now |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.8700 / $2.0600 | Buy Now |
DISTI #
77576636
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Verical | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB Min Qty: 11 Package Multiple: 1 Date Code: 2351 | Americas - 4834 |
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$1.3557 / $2.0185 | Buy Now |
DISTI #
IRFBC40LCPBF
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TTI | MOSFET 600V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.8600 / $1.9400 | Buy Now |
DISTI #
IRFBC40LCPBF
|
Avnet Americas | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: IRFBC40LCPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$2.1317 / $2.7080 | Buy Now |
DISTI #
IRFBC40LCPBF
|
TME | Transistor: N-MOSFET, unipolar, 600V, 3.9A, 125W, TO220AB Min Qty: 1 | 153 |
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$0.9100 / $1.3800 | Buy Now |
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IRFBC40LCPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBC40LCPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 530 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |