Part Details for IRFBC40APBF by Vishay Intertechnologies
Overview of IRFBC40APBF by Vishay Intertechnologies
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRFBC40APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2463
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Newark | Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFBC40APBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 451 |
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$1.2200 / $2.2500 | Buy Now |
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DISTI #
63J6687
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Newark | N Channel Mosfet, 600V, 6.2A To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:6.2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFBC40APBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.5200 | Buy Now |
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DISTI #
IRFBC40APBF
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Avnet Americas | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFBC40APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.9360 / $1.1890 | Buy Now |
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DISTI #
IRFBC40APBF
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Avnet Americas | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFBC40APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
844-IRFBC40APBF
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Mouser Electronics | MOSFET 600V N-CH HEXFET RoHS: Compliant | 2271 |
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$1.0000 / $2.0900 | Buy Now |
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DISTI #
E02:0323_00021294
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Arrow Electronics | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2308 | Europe - 2900 |
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$0.8024 / $1.1426 | Buy Now |
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DISTI #
V99:2348_09218685
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Arrow Electronics | Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2050 | Americas - 400 |
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$0.6802 / $0.9014 | Buy Now |
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DISTI #
70078884
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RS | MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 1.2 Ohms, ID 6.2A, TO-220AB, PD 125W, VGS+/-30V | Vishay PCS IRFBC40APBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$1.0900 / $1.2800 | RFQ |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 1000Tube |
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$0.5450 / $0.5800 | Buy Now |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.9800 / $1.2300 | Buy Now |
Part Details for IRFBC40APBF
IRFBC40APBF CAD Models
IRFBC40APBF Part Data Attributes:
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IRFBC40APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBC40APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 570 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |