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Part Details for IRFB3307ZPBF by Infineon Technologies AG
Overview of IRFB3307ZPBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRFB3307ZPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61M6829
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Newark | Mosfet, N-Ch, 75V, 120A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:120A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFB3307ZPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 796 |
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$1.0800 / $2.4100 | Buy Now |
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DISTI #
IRFB3307ZPBF-ND
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DigiKey | MOSFET N-CH 75V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
1381 In Stock |
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$1.0421 / $2.4000 | Buy Now |
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DISTI #
IRFB3307ZPBF
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Avnet Americas | Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3307ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.9068 / $1.1083 | Buy Now |
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DISTI #
942-IRFB3307ZPBF
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Mouser Electronics | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg RoHS: Compliant | 656 |
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$1.0400 / $2.2100 | Buy Now |
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DISTI #
E02:0323_00277836
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Arrow Electronics | Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2228 | Europe - 17167 |
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$0.7517 / $1.0762 | Buy Now |
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DISTI #
V99:2348_13890428
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Arrow Electronics | Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2228 | Americas - 40 |
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$0.8716 / $1.3600 | Buy Now |
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Future Electronics | Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 8Tube |
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$1.0300 / $1.1700 | Buy Now |
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Future Electronics | Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.0300 / $1.1400 | Buy Now |
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DISTI #
70390146
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Verical | Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2148 | Americas - 22000 |
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$1.0815 | Buy Now |
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DISTI #
63448437
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Verical | Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 7 Package Multiple: 1 Date Code: 2228 | Americas - 17164 |
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$0.7493 / $1.0727 | Buy Now |
Part Details for IRFB3307ZPBF
IRFB3307ZPBF CAD Models
IRFB3307ZPBF Part Data Attributes:
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IRFB3307ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3307ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB3307ZPBF
This table gives cross-reference parts and alternative options found for IRFB3307ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3307ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB3307ZGPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB3307ZPBF vs IRFB3307ZGPBF |