Part Details for IRF7343TRPBF by International Rectifier
Overview of IRF7343TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7343TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 233 |
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RFQ | ||
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Quest Components | 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | 12 |
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$1.0500 / $2.1000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 4000 |
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RFQ | |
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Sense Electronic Company Limited | SOP | 5208 |
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RFQ |
Part Details for IRF7343TRPBF
IRF7343TRPBF CAD Models
IRF7343TRPBF Part Data Attributes:
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IRF7343TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7343TRPBF
International Rectifier
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 72 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 4.7 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7343TRPBF
This table gives cross-reference parts and alternative options found for IRF7343TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7343TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STS4C3F60L | 4A, 60V, 0.065ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | STMicroelectronics | IRF7343TRPBF vs STS4C3F60L |
HAT3008R | Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | IRF7343TRPBF vs HAT3008R |
AUIRF7343QTR | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | IRF7343TRPBF vs AUIRF7343QTR |
HAT3008R | 5A, 60V, 0.084ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | IRF7343TRPBF vs HAT3008R |
FDS4559_F085 | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Fairchild Semiconductor Corporation | IRF7343TRPBF vs FDS4559_F085 |
HAT3018R | 6A, 60V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | Renesas Electronics Corporation | IRF7343TRPBF vs HAT3018R |
HAT3010R | Power Field-Effect Transistor, 6A I(D), 60V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8 | Hitachi Ltd | IRF7343TRPBF vs HAT3010R |