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Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8265
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Newark | Dual N/P Channel Mosfet, 55V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:4.7A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7343TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 24495 |
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$0.4340 / $1.1400 | Buy Now |
DISTI #
IRF7343PBFCT-ND
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DigiKey | MOSFET N/P-CH 55V 4.7A/3.4A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6279 In Stock |
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$0.4238 / $1.1300 | Buy Now |
DISTI #
IRF7343TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7343TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3893 / $0.4450 | Buy Now |
DISTI #
IRF7343TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7343TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3893 / $0.4450 | Buy Now |
DISTI #
19K8265
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Avnet Americas | Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R - Bulk (Alt: 19K8265) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 4971 Partner Stock |
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$0.5080 / $1.1400 | Buy Now |
DISTI #
942-IRF7343TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL N/PCh 55V 4.7A RoHS: Compliant | 24450 |
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$0.4330 / $1.1000 | Buy Now |
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Future Electronics | Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 36000Reel |
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$0.3350 / $0.3600 | Buy Now |
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Future Electronics | Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.3700 / $0.3850 | Buy Now |
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Bristol Electronics | 404 |
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RFQ | ||
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Quest Components | 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | 2800 |
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$0.6000 / $2.0000 | Buy Now |
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IRF7343TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7343TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 72 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 4.7 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |