Part Details for IRF640 by Comset Semiconductor
Overview of IRF640 by Comset Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
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IRF640
Comset Semiconductor
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Datasheet
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IRF640
Comset Semiconductor
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | COMSET SEMICONDUCTORS | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640
This table gives cross-reference parts and alternative options found for IRF640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SFF240Z | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRF640 vs SFF240Z |
| 2SK2849-01L | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | IRF640 vs 2SK2849-01L |
| AP18N20GH-HF | TRANSISTOR 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | IRF640 vs AP18N20GH-HF |
| 2SK3608-01L | Power Field-Effect Transistor, 18A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IRF640 vs 2SK3608-01L |
| UF640-TA3-T | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | IRF640 vs UF640-TA3-T |
| IRL640AJ69Z | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF640 vs IRL640AJ69Z |
| IRL640J69Z | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF640 vs IRL640J69Z |
| LVP640P | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Lite-On Semiconductor Corporation | IRF640 vs LVP640P |
| SSFGS640 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | IRF640 vs SSFGS640 |
| AP18N20GJ-HF | TRANSISTOR 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | IRF640 vs AP18N20GJ-HF |