Datasheets
IRF2907ZS-7PPBF by:

Power Field-Effect Transistor, 160A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7

Part Details for IRF2907ZS-7PPBF by Infineon Technologies AG

Overview of IRF2907ZS-7PPBF by Infineon Technologies AG

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Price & Stock for IRF2907ZS-7PPBF

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 75V 160A D2PAK7 10700
RFQ
DISTI # SP001559526
EBV Elektronik Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) D2PAK (Alt: SP001559526) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 1078405
element14 Asia-Pacific MOSFET, N, D2-PAK/7 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $4.7384
  • 10 $3.9043
  • 100 $3.2327
  • 500 $2.9227
  • 1,000 $2.6423
$2.6423 / $4.7384 Buy Now
DISTI # 1078405
Farnell MOSFET, N, D2-PAK/7 RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each 0
  • 1 $4.4284
  • 25 $3.8047
  • 100 $3.3432
  • 250 $2.8317
  • 1,000 $2.3702
$2.3702 / $4.4284 Buy Now

Part Details for IRF2907ZS-7PPBF

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IRF2907ZS-7PPBF Part Data Attributes:

IRF2907ZS-7PPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF2907ZS-7PPBF Infineon Technologies AG Power Field-Effect Transistor, 160A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 410 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 700 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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