Part Details for IPT60R102G7 by Infineon Technologies AG
Overview of IPT60R102G7 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPT60R102G7
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 36000 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 127 |
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$1.5681 / $3.3600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.102OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1934 |
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$2.3625 / $6.7500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.102OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 6400 |
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$1.5225 / $4.3500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.102OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 101 |
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$2.1000 / $4.5000 | Buy Now |
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Ameya Holding Limited | 2055577 |
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RFQ | ||
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Chip Stock | 50000 |
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RFQ |
Part Details for IPT60R102G7
IPT60R102G7 CAD Models
IPT60R102G7 Part Data Attributes:
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IPT60R102G7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPT60R102G7
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 78 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 0.102 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |