Part Details for IPP65R065C7 by Infineon Technologies AG
Overview of IPP65R065C7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for IPP65R065C7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP65R065C7
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Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 445 |
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$4.5700 / $8.0600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 33A I(D), 650V, 0.065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 19 |
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$5.1413 / $10.2825 | Buy Now |
Part Details for IPP65R065C7
IPP65R065C7 CAD Models
IPP65R065C7 Part Data Attributes
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IPP65R065C7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP65R065C7
Infineon Technologies AG
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 171 W | |
| Pulsed Drain Current-Max (IDM) | 145 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP65R065C7
This table gives cross-reference parts and alternative options found for IPP65R065C7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R065C7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW65R065C7 | Power Field-Effect Transistor | Infineon Technologies AG | IPP65R065C7 vs IPW65R065C7 |
| IPP65R065C7XKSA1 | Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPP65R065C7 vs IPP65R065C7XKSA1 |