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Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP60R190P6
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Mouser Electronics | MOSFET HIGH POWER_PRC/PRFRM RoHS: Compliant | 486 |
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$1.2800 / $2.7600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 520 |
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$1.0192 / $3.1360 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 18 |
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$1.9600 / $3.1360 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 480 |
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$2.7077 / $4.9230 | Buy Now |
DISTI #
TMOS1101
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Rutronik | N-CH 650V 57A 190mOhm TO 220 RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Tube |
Stock DE - 1000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.3200 / $1.7500 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 | 100 |
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$1.6410 / $2.4930 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 | 500 |
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$1.6410 / $2.4930 | Buy Now |
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IPP60R190P6
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP60R190P6
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 419 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.2 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 57 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPP60R190P6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R190P6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPW60R190P6 | Power Field-Effect Transistor, | Infineon Technologies AG | IPP60R190P6 vs IPW60R190P6 |