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Part Details for IPP023N10N5 by Infineon Technologies AG
Overview of IPP023N10N5 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPP023N10N5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IPP023N10N5
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Mouser Electronics | MOSFET N-Ch 100V 120A TO220-3 RoHS: Compliant | 3 |
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$3.4300 / $6.6300 | Buy Now |
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DISTI #
73928960
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RS | Transistor, OptiMOS 5 Power MOSFET, N-channel, normal level, 100V, 120A, TO220 | Infineon IPP023N10N5 RoHS: Not Compliant Min Qty: 4 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$5.9900 / $6.6500 | RFQ |
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Bristol Electronics | 375 |
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RFQ | ||
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DISTI #
TMOS7021
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Rutronik | N-CH 100V 120A 2,0mOhm TO220-3 RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Tube |
Stock DE - 500 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.9500 | Buy Now |
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|
Chip1Cloud | N-channel, normal level | 562879 |
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RFQ | |
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LCSC | TO-220-3 MOSFETs ROHS | 23 |
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$2.7939 / $4.3889 | Buy Now |
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|
Sense Electronic Company Limited | TO-220 | 3249 |
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RFQ | |
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Win Source Electronics | N-channel, normal level | 84260 |
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$2.2610 / $3.3920 | Buy Now |
Part Details for IPP023N10N5
IPP023N10N5 CAD Models
IPP023N10N5 Part Data Attributes
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IPP023N10N5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP023N10N5
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 979 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |