Datasheets
IPB64N25S3-20 by:

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN

Part Details for IPB64N25S3-20 by Infineon Technologies AG

Overview of IPB64N25S3-20 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPB64N25S3-20

Part # Distributor Description Stock Price Buy
DISTI # 726-IPB64N25S3-20
Mouser Electronics MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant 6720
  • 1 $6.4500
  • 10 $5.4100
  • 25 $5.1100
  • 100 $4.3800
  • 250 $4.1300
  • 500 $3.8900
  • 1,000 $3.3300
  • 2,000 $3.3200
$3.3200 / $6.4500 Buy Now
DISTI # 79005662
Verical Trans MOSFET N-CH 250V 64A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 12 Package Multiple: 1 Date Code: 2301 Americas - 1000
  • 12 $6.9906
  • 25 $6.6902
  • 50 $6.4353
  • 100 $6.2170
  • 250 $6.0284
  • 500 $5.8644
  • 1,000 $5.7209
$5.7209 / $6.9906 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 75
  • 1 $7.4700
  • 6 $3.7350
  • 55 $3.2370
$3.2370 / $7.4700 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 800
  • 1 $11.8980
  • 137 $6.5439
  • 307 $5.9490
$5.9490 / $11.8980 Buy Now
Chip1Cloud N-channel - Enhancement mode 9000
RFQ
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 1000
  • 1 $9.5450
  • 5 $5.0060
  • 10 $4.4390
  • 30 $4.0610
  • 50 $3.9850
  • 60 $3.9660
$3.9660 / $9.5450 Buy Now

Part Details for IPB64N25S3-20

IPB64N25S3-20 CAD Models

IPB64N25S3-20 Part Data Attributes:

IPB64N25S3-20 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB64N25S3-20 Infineon Technologies AG Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 270 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 256 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB64N25S3-20

This table gives cross-reference parts and alternative options found for IPB64N25S3-20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB64N25S3-20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB64N25S3-20 vs IPB200N25N3GATMA1
IPB64N25S320ATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 Infineon Technologies AG IPB64N25S3-20 vs IPB64N25S320ATMA1
SP000677896 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Infineon Technologies AG IPB64N25S3-20 vs SP000677896
Part Number Description Manufacturer Compare
IXTT64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IPB64N25S3-20 vs IXTT64N25P
IXFH60N25Q Power Field-Effect Transistor, 60A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IXYS Corporation IPB64N25S3-20 vs IXFH60N25Q
IPP220N25NFD Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB64N25S3-20 vs IPP220N25NFD
IPB200N25N3GATMA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB64N25S3-20 vs IPB200N25N3GATMA1
SP000677896 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Infineon Technologies AG IPB64N25S3-20 vs SP000677896
2SK3779-01R Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fuji Electric Co Ltd IPB64N25S3-20 vs 2SK3779-01R
IPP200N25N3GXKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB64N25S3-20 vs IPP200N25N3GXKSA1
IXFK60N25Q Power Field-Effect Transistor, 60A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN IXYS Corporation IPB64N25S3-20 vs IXFK60N25Q
IPI200N25N3GAKSA1 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB64N25S3-20 vs IPI200N25N3GAKSA1
IXTQ64N25P Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc IPB64N25S3-20 vs IXTQ64N25P

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