Part Details for IPA50R190CE by Infineon Technologies AG
Overview of IPA50R190CE by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPA50R190CE
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
ComSIT USA | 500 V COOLMOS CE POWER TRANSISTOR Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 500 |
|
RFQ | |
|
Chip1Cloud | 500V CoolMOS? CE Power MOSFET | MOSFET N-CH 500V 18.5A TO220FP | 1080 |
|
RFQ | |
|
LCSC | TO-220-3 MOSFETs ROHS | 157 |
|
$1.4041 / $2.1576 | Buy Now |
|
Win Source Electronics | 500V CoolMOS™ CE Power MOSFET | MOSFET N-CH 500V 18.5A TO220FP | 2880 |
|
$1.2620 / $1.8920 | Buy Now |
Part Details for IPA50R190CE
IPA50R190CE CAD Models
IPA50R190CE Part Data Attributes:
|
IPA50R190CE
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPA50R190CE
Infineon Technologies AG
Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220FP, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 339 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 63 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |