Part Details for IKQ75N120CH3 by Infineon Technologies AG
Overview of IKQ75N120CH3 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IKQ75N120CH3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IKQ75N120CH3
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TME | Transistor: IGBT, 1.2kV, 75A, 256W, TO247-3, H3 Min Qty: 1 | 0 |
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$13.6500 / $14.8400 | RFQ |
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DISTI #
IGBT2268
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Rutronik | IGBT 1200V 75A 2,0V TO247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 120 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$10.7000 / $13.1400 | Buy Now |
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LCSC | TO-247-3 IGBTs ROHS | 30 |
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$5.5504 / $7.5124 | Buy Now |
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MacroQuest Electronics | STOCK | 28000 |
|
RFQ |
Part Details for IKQ75N120CH3
IKQ75N120CH3 CAD Models
IKQ75N120CH3 Part Data Attributes:
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IKQ75N120CH3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKQ75N120CH3
Infineon Technologies AG
IGBT
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 938 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 454 ns | |
| Turn-on Time-Nom (ton) | 81 ns | |
| VCEsat-Max | 2.35 V |