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Part Details for FQT3P20TF by onsemi
Overview of FQT3P20TF by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Smart Cities
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQT3P20TF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
46AC0866
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Newark | Mosfet, P-Ch, -400V, -0.67A, Sot-223-4, Channel Type:P Channel, Drain Source Voltage Vds:-200V, Continuous Drain Current Id:-670Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-5V Rohs Compliant: Yes |Onsemi FQT3P20TF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1515 |
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$0.8630 | Buy Now |
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DISTI #
82C4371
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Newark | Transistor, mosfet, p-Channel,200V V(Br)Dss,670Ma I(D),sot-223 Rohs Compliant: Yes |Onsemi FQT3P20TF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
08AK6017
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Newark | Qf -200V 1.7Ohm Sot223/Reel Rohs Compliant: Yes |Onsemi FQT3P20TF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.8630 | Buy Now |
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Ameya Holding Limited | Min Qty: 1000 | 4000 |
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$0.8880 / $0.9153 | Buy Now |
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Chip 1 Exchange | INSTOCK | 46805 |
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RFQ |
Part Details for FQT3P20TF
FQT3P20TF CAD Models
FQT3P20TF Part Data Attributes:
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FQT3P20TF
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT3P20TF
onsemi
Power MOSFET, P-Channel, QFET®, -200 V, -0.67 A, 2.7 Ω, SOT-223, 4000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 318H-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 0.67 A | |
| Drain-source On Resistance-Max | 2.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 2.7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |