Datasheets
FF300R07KE4HOSA1 by:

Insulated Gate Bipolar Transistor, 365A I(C), 650V V(BR)CES, N-Channel, MODULE-7

Part Details for FF300R07KE4HOSA1 by Infineon Technologies AG

Overview of FF300R07KE4HOSA1 by Infineon Technologies AG

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Price & Stock for FF300R07KE4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 27X9043
Newark Igbt Array & Module Transistor, Dual Npn, 365 A, 1.55 V, 940 W, 650 V, Module Rohs Compliant: Yes |Infineon FF300R07KE4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $170.2600
$170.2600 Buy Now
DISTI # 448-FF300R07KE4HOSA1-ND
DigiKey IGBT MODULE 650V 940W Min Qty: 1 Lead time: 16 Weeks Container: Tray 3
In Stock
  • 1 $113.1600
  • 10 $104.7460
  • 30 $100.9233
  • 80 $96.3359
$96.3359 / $113.1600 Buy Now
DISTI # FF300R07KE4HOSA1
Avnet Americas Transistor IGBT Module N-CH 650V 365A 20V Screw Mount Tray - Trays (Alt: FF300R07KE4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $117.3350
$117.3350 Buy Now
Future Electronics FF300R07KE4 Series 650 V 365 A 940 W Chassis Mount IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 10 $101.3900
  • 20 $100.6500
  • 30 $100.2200
  • 40 $99.9100
  • 50 $98.9500
$98.9500 / $101.3900 Buy Now
DISTI # SP000849136
EBV Elektronik Transistor IGBT Module N-CH 650V 365A 20V Screw Mount Tray (Alt: SP000849136) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FF300R07KE4HOSA1

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FF300R07KE4HOSA1 Part Data Attributes:

FF300R07KE4HOSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FF300R07KE4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 365A I(C), 650V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 365 A
Collector-Emitter Voltage-Max 650 V
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 491 ns
Turn-on Time-Nom (ton) 143 ns

Alternate Parts for FF300R07KE4HOSA1

This table gives cross-reference parts and alternative options found for FF300R07KE4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF300R07KE4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF300R07KE4 Insulated Gate Bipolar Transistor, 365A I(C), 650V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF300R07KE4HOSA1 vs FF300R07KE4
Part Number Description Manufacturer Compare
CM100DY-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors FF300R07KE4HOSA1 vs CM100DY-12H
CM400DY-12NF Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric FF300R07KE4HOSA1 vs CM400DY-12NF
1MBI600NP-060 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M128, 4 PIN Fuji Electric Co Ltd FF300R07KE4HOSA1 vs 1MBI600NP-060
BSM300GB60DLCHOSA1 Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF300R07KE4HOSA1 vs BSM300GB60DLCHOSA1
2MBI150F-060 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN Fuji Electric Co Ltd FF300R07KE4HOSA1 vs 2MBI150F-060
CM600HA-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel Powerex Power Semiconductors FF300R07KE4HOSA1 vs CM600HA-12H
CM400DY-12NF Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors FF300R07KE4HOSA1 vs CM400DY-12NF
2MBI300N-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M236, 7 PIN Fuji Electric Co Ltd FF300R07KE4HOSA1 vs 2MBI300N-120
MG300J2YS11 TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components FF300R07KE4HOSA1 vs MG300J2YS11
APTGT600SK60G Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc FF300R07KE4HOSA1 vs APTGT600SK60G

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