Datasheets
FDSS2407 by:

N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ, 2500-REEL, Automotive Qualified

Part Details for FDSS2407 by onsemi

Overview of FDSS2407 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDSS2407

Part # Distributor Description Stock Price Buy
DISTI # FDSS2407
Avnet Americas Transistor MOSFET Array Dual N-CH 62V 3.3A 8-Pin SOIC T/R - Tape and Reel (Alt: FDSS2407) RoHS: Compliant Min Qty: 1163 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 35000 Partner Stock
  • 1,163 $0.6364
  • 1,200 $0.6192
  • 2,400 $0.6020
  • 5,900 $0.5848
  • 12,000 $0.5676
  • 59,000 $0.5504
  • 120,000 $0.5332
$0.5332 / $0.6364 Buy Now
DISTI # FDSS2407
Avnet Americas Transistor MOSFET Array Dual N-CH 62V 3.3A 8-Pin SOIC T/R - Tape and Reel (Alt: FDSS2407) RoHS: Compliant Min Qty: 1163 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 35000 Partner Stock
  • 1,163 $0.6364
  • 1,200 $0.6192
  • 2,400 $0.6020
  • 5,900 $0.5848
  • 12,000 $0.5676
  • 59,000 $0.5504
  • 120,000 $0.5332
$0.5332 / $0.6364 Buy Now
DISTI # FDSS2407
Avnet Americas Transistor MOSFET Array Dual N-CH 62V 3.3A 8-Pin SOIC T/R - Tape and Reel (Alt: FDSS2407) RoHS: Compliant Min Qty: 1163 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 35000 Partner Stock
  • 1,163 $0.6364
  • 1,200 $0.6192
  • 2,400 $0.6020
  • 5,900 $0.5848
  • 12,000 $0.5676
  • 59,000 $0.5504
  • 120,000 $0.5332
$0.5332 / $0.6364 Buy Now
DISTI # 4279997
Farnell MISCELLANEOUS MOSFETS RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each 468999
  • 2,500 $0.7308
$0.7308 Buy Now
Flip Electronics Stock, ship today 35000
  • 1 $0.4300
$0.4300 RFQ

Part Details for FDSS2407

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FDSS2407 Part Data Attributes

FDSS2407 onsemi
Buy Now Datasheet
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FDSS2407 onsemi N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ, 2500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 62 V
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.27 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDSS2407

This table gives cross-reference parts and alternative options found for FDSS2407. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDSS2407, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDSS2407_NL Power Field-Effect Transistor, 3.3A I(D), 62V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDSS2407 vs FDSS2407_NL
Part Number Description Manufacturer Compare
FDSS2407_NL Power Field-Effect Transistor, 3.3A I(D), 62V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDSS2407 vs FDSS2407_NL
EPC8009 Power Field-Effect Transistor, 2.7A I(D), 65V, 0.13ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 Efficient Power Conversion FDSS2407 vs EPC8009

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